9.2A, 100V, 0.270 Ohm, N-Channel
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Features
• 9.2A, 100V
roadstar Power MOSFET this is the same transistor being used in the galaxy's as the driver and the dual finals this is also the replacement now for the 2sc1969,2312,and the 2166 so no more high power unless you install this in your radio im not resposible for inproper use of this or damage to your radio for improper instalation please do your research before you install.... this is coming factory in all radio's now being released.......
